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| Ordering number : ENA0277 2SC6080 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC6080 Applications * 50V / 13A High-Speed Switching Applications High-speed switching applications (switching regulator, driver circuit). Features * * * * Adoption of MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C PW10s, duty cycle10% Conditions Ratings 60 60 50 6 13 15 2 2 25 150 --55 to +150 Unit V V V V A A A W W C C Electrical Characteristics at Ta=25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO hFE1 hFE2 Conditions VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=270mA VCE=2V, IC=8.1A 200 50 Ratings min typ max 10 10 560 Unit A A Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 31506FA MS IM TB-00002091 No. A0277-1/4 2SC6080 Continued from preceding page. Parameter Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol fT Cob VCE(sat) VBE(sat) V(BR)CBO V(BR)CES V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=5V, IC=1A VCB=10V, f=1MHz IC=6A, IB=300mA IC=6A, IB=300mA IC=100A, IE=0A IC=100A, RBE=0 IC=1mA, RBE= IE=100A, IC=0A See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. 60 60 50 6 46 450 35 Ratings min typ 180 73 200 400 1.2 max Unit MHz pF mV V V V V V ns ns ns Package Dimensions unit : mm 7508-002 10.0 3.2 4.5 2.8 Switching Time Test Circuit PW=20s D.C.1% INPUT IB1 IB2 RB OUTPUT 3.5 7.2 VR RL + + 470F VCC=25V 16.0 50 18.1 100F 1.6 1.2 0.75 VBE= --5V 5.6 14.0 0.7 IC=20IB1= --20IB2=5A 123 2.4 1 : Base 2 : Collector 3 : Emitter SANYO : TO-220ML 2.55 2.55 10 IC -- VCE 200mA 150mA 100 5.0 IC -- VCE 50mA 45mA 40m A 9 8 7 6 5 4 3 2 1 0 0 80 mA 60m A 40mA 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 Collector Current, IC -- A Collector Current, IC -- A 35 30 mA mA 25 mA mA 20m A 15mA 20mA 15mA 10mA 10mA 5mA 5mA IB=0mA 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 IB=0mA 0.8 0.9 1.0 Collector-to-Emitter Voltage, VCE -- V IT10549 Collector-to-Emitter Voltage, VCE -- V IT10550 No. A0277-2/4 2SC6080 14 IC -- VBE VCE=2V 1000 7 5 hFE -- IC VCE=2V Ta=75C 12 Collector Current, IC -- A 10 DC Current Gain, hFE 3 2 25C 8 --25C 100 7 5 3 2 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 IT10551 Ta= 75 C 25 C --25 C 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Base-to-Emitter Voltage, VBE -- V 1000 7 5 hFE -- IC Collector Current, IC -- A 1000 7 IT10552 f T -- IC Ta=25C VCE=10V Gain-Bandwidth Product, f T -- MHz 5 3 2 DC Current Gain, hFE 3 2 V CE 0.5 =2 .0V V 1.0 100 7 5 3 2 100 7 5 3 2 V 0.7V 0.2V 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 1000 7 IT10553 7 Cob -- VCB Collector Current, IC -- A 5 7 10 IT10554 VCE(sat) -- IC f=1MHz 5 IC / IB=20 Output Capacitance, Cob -- pF 5 3 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 0.1 7 5 3 2 100 7 5 3 2 = Ta C 75 0.01 7 5 0.01 2 --2 C 5 C 5 10 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 7 5 IT10555 2 VCE(sat) -- IC Collector Current, IC -- A IT10556 VBE(sat) -- IC IC / IB=50 IC / IB=20 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.0 Ta= --25C 7 0.1 7 5 3 2 = Ta C 75 2 -C 5 25 C 5 25C 75C 3 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 0.01 23 5 7 0.1 23 5 7 1.0 23 5 7 10 23 IT10558 Collector Current, IC -- A IT10557 Collector Current, IC -- A No. A0277-3/4 2SC6080 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 Forward Bias A S O ICP=15A Collector Dissipation, PC -- W IC=13A 10 0m s 2.5 PC -- Ta s 00 =5 s PT 1m n ms ratio 10 e op Collector Current, IC -- A 2.0 DC 1.5 No he at sin k 1.0 0.5 0.01 0.1 Tc=25C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 0 5 7 100 IT10559 0 20 40 60 80 100 120 140 160 Collector-to-Emitter Voltage, VCE -- V 30 Ambient Temperature, Ta -- C IT10560 PC -- Tc Collector Dissipation, PC -- W 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 Case Temperature, Tc -- C IT10561 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0277-4/4 |
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